? 2004 ixys all rights reserve v ces = 1700 v i c25 =75a v ce(sat) = 3.6 v c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) features z high blocking voltage z jedec to-268 surface and jedec to-247 ad z low conduction losses z high current handling capability z mos gate turn-on - drive simplicity z molding epoxies meet ul 94 v-0 flammability classification applications z ac motor speed control z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z capacitor discharge circuits advantages z lower conduction losses than mosfets z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds98710b(12/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 750 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 v ces t j = 25 c50 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.6 v t j = 125 c 3.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c42a i cm t c = 25 c, 1 ms 180 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm =90 a (rbsoa) clamped inductive load v ces = 1350 v t sc v ge = 15 v, v ces = 1200v, t j = 125 c (scsoa) r g = 10 ? non repetitive 10 s p c t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 350 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixbt) (tab) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor ixbh 42n170 ixbt 42n170
ixys reserves the right to change limits, test conditions, and dimensions. dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 20 30 s pulse test, t 300 s, duty cycle 2 % c ies 3500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 195 pf c res 45 pf q g 147 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 40 nc q gc 70 nc t d(on) 45 ns t ri 35 ns t d(off) 365 ns t fi 465 ns e off 9mj t d(on) 45 ns t ri 38 ns e on 50 mj t d(off) 390 ns t fi 730 ns e off 12.8 mj r thjc 0.35 k/w r thck (to-247) 0.25 k/w reverse diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 3.0 v t < 300 us, duty cycle d < 2% i rm i f = 25a, v ge = 0 v, -di f /dt = 50 a/us 24 a t rr v r = 100v 360 n s inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.5 v ces , r g = r off = 10 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.5 v ces , r g = r off = 10 ? min recommended footprint to-268 outline ixbh 42n170 ixbt 42n170 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserve ixbh 42n170 ixbt 42n170 fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 10 12 14 16 18 v c e - volts i c - amperes v ge = 17v 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 01234567 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 01 23 45 67 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 42a i c = 21a v ge = 15v i c = 84a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 9 10 5 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 84a 42a 21a fig. 6. input adm ittance 0 10 20 30 40 50 60 70 80 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixbh 42n170 ixbt 42n170 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 10 20304050607080 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. dependence of turn-off en e r g y o n r g 5 10 15 20 25 30 35 0 10203040 5060708090 r g - ohms e off - millijoules i c = 21a t j = 125oc v ge = 15v v ce = 850v i c = 42a i c = 84a fig. 10. dependence of turn-off en e r g y on i c 4 6 8 10 12 14 16 18 20 22 24 20 30 40 50 60 70 80 90 i c - amperes e off - millijoules r g = 10 ? v ge = 15v v ce = 850v t j = 125oc t j = 25oc fig. 12. gate charge 0 3 6 9 12 15 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g e - volts v ce = 600v i c = 42a i g = 10ma fig. 8. forw ard voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.5 1 1.5 2 2.5 3 3.5 v f - volts i f - amperes t j = 125 o c t j = 25 o c fig. 11. dependence of turn-off energy on temperature 4 6 8 10 12 14 16 18 20 22 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 84a r g = 10 ? v ge = 15v v ce = 850v i c = 42a i c = 21a
? 2004 ixys all rights reserve ixbh 42n170 ixbt 42n170 fig. 13. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 14. maxim um transient therm al resistance 0.01 0.1 1 0.1 1 10 100 1000 pulse width - millisec onds r (th) j c - (oc/w)
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